FF200R12KT4  - Infineon Taiwan  Sales

BRAND Infineon
Product FF200R12KT4
Description IGBT Module
Internal code IMP4751131
Technical specification Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.75 V Continuous Collector Current at 25 C: 320 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 1100 W

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